Samsung developed a 2.25μm pixel-interval CMOS sensor

South Korea's Samsung Electronics has unveiled new CMOS imaging devices featuring a pixel pitch of just 2.25 micrometers and an aperture ratio exceeding 55%. The sensor, with a diagonal size of 1/2 inch (approximately 8 mm), packs around 7.2 million pixels. This represents a significant advancement in image sensor technology, especially given that most sensors with a pixel pitch below 2.5 micrometers typically have an aperture ratio of around 25%. A higher aperture ratio allows for better light collection, which in turn improves the signal output and overall image quality. According to reports, Samsung utilized copper wiring in these latest developments. This innovation was first presented at the "2005 IEEE Workshop on Charge-Coupled Devices and Advanced Image Sensors (CCD & AIS)" in June 2005, where a research team from IBM and Kodak in the U.S. also shared similar findings. In addition to the 2.25-micrometer pixel pitch model, Samsung also showcased prototypes of CMOS sensors with a 2.0-micrometer pixel pitch and an approximate 50% aperture ratio. While it remains unclear whether copper wiring was used in those models, the company reduced the wiring width to either 90 nm or 130 nm to achieve the improved aperture ratio. Although these advancements are promising, Samsung has not yet announced a commercial release date for these products. The development highlights ongoing efforts to push the limits of image sensor performance while maintaining compact form factors.

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