Samsung developed a 2.25μm pixel-interval CMOS sensor

South Korea's Samsung Electronics has unveiled new CMOS imaging devices featuring a pixel pitch of just 2.25μm and an impressive aperture ratio exceeding 55%. The sensor, with a diagonal size of 1/2 inch (approximately 8mm), integrates around 7.2 million pixels, marking a significant advancement in compact image sensor technology. In typical CMOS sensors with a pixel pitch below 2.5μm, the aperture ratio is usually around 25%. A higher aperture ratio allows for better light capture, which in turn improves the signal output level. According to reports, Samsung incorporated copper wiring into its latest development. This innovation was previously showcased at the "2005 IEEE Workshop on Charge-Coupled Devices and Advanced Image Sensors (CCD & AIS)" in June 2005, where a research team from IBM and Kodak presented similar prototypes. At the same conference, Samsung also shared preliminary results of CMOS sensors with an aperture ratio of approximately 50% and a pixel pitch of 2.0μm. While it remains unclear whether these models used copper wiring, the company did mention that they reduced the wiring width to either 90nm or 130nm to enhance the aperture ratio. Despite these advancements, Samsung has not yet announced a commercial release date for these products. The technology represents a major step forward in high-resolution, compact imaging solutions, and could have wide-ranging implications for smartphones, cameras, and other imaging applications.

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